FDS8817NZ Datasheet, MOSFET, ON Semiconductor

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FDS8817NZ Features and benefits

* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
* HBM ESD Protection Level of 3.8 kV Typical*
* High Perfo.

FDS8817NZ Application

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
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FDS8817NZ Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.

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