* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
* HBM ESD Protection Level of 3.8 kV Typical*
* High Perfo.
common in Notebook Computers and Portable Battery Packs.
Features
* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Co.
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